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Whole catalog
↠ Active ingredients
↠ Transistors, modules
↠ Field effect transistors
Transistor LBSS138LT1G N-Channel Logic Level Enhancement Mode Field Effect Transistor
Vdss = 50 V; RDS (ON) = 3.5Ω @ VGS = 10 V; RDS (ON) = 6.0Ω @ VGS = 4.5 V.
Case:
SOT23 Manufacturer:
LRC
In stock
Issue rate: 10 pcs
(The ordered amount will be automatically rounded to 10 pcs)
from 10 pcs :
—
1,00
UAH
from 100 pcs :
—
0,85
UAH
( -15,0%)
from 1000 pcs :
—
0,70
UAH
( -30,0%)
Магазин-Днепр
6155 pcs
For Online Orders
6155 pcs
Производитель
LRC
Корпус
SOT23
Структура
N
Схема соединения
Одиночный
V(BR)DSS - напряжение пробоя сток-исток
50 V
Vgs - напряжение затвор-исток
±20 V
Id25 - постоянный ток стока при 25°C
0.2 А
Rds(on)25 - сопротивление сток-исток при 25°C,Vgs=10V
3.5 Ом
Rds(on)25 - сопротивление сток-исток при 25°C,Vgs=5V
6 Ом
VGS(th) - пороговое напряжение затвор-исток (диапазон)
0.5 ... 1.5 V
Мощность рассеяния при 25°C
0.225 Вт
The data presented in the product description are for reference only and may differ from those indicated by the manufacturer.
To carry out technical calculations and obtain the exact parameters of the goods, use the datasheets from the manufacturer's website.
If you need additional information, or you found an error in the description, or have other questions about this product, then our manager will help you: Евгений ЗП
unknown
contacts
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