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Whole catalog Active ingredientsTransistors, modulesField effect transistors
Код товара:
010994

IRFZ48N

Field-effect transistor N-Канальный Логический уровень
V dss = 55 V ; R ds = 0.014 Ohm ; I d 25°C = 64 A ; I d 100°C = 45 A; R°C/W = 1.15°C/W; P d = 130 W
IRFZ48N
Корпус: TO220
Manufacturer: ST Microelectronics (STM)
NOT available.
Expected price: 29,92 UAH
from 1 pc : 29,92 UAH
from 10 pcs : 29,20 UAH ( -2,4%)
from 50 pcs : 28,45 UAH ( -4,9%)
Prices are indicated at the time of product availability and may change upon receipt

Current balances:

NOT available

Изображение товара

Product description format_size zoom_out zoom_in

Parameter Value
Channel:
Logic level:
Drain-source breakdown voltage, V dss : V
On-drain drain-source resistance, R ds : Ohm
Constant drain current, at temperature = 25°C, I d A
Permanent drain current, at temperature = 100°C, I d A
Maximum die-to-case thermal resistance, R°C/W: °C/W
Maximum power dissipation, P d : Tue

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The data presented in the product description are for reference only and may differ from those indicated by the manufacturer.
To carry out technical calculations and obtain the exact parameters of the goods, use the datasheets from the manufacturer's website.

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