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Whole catalog Active ingredientsDiodes bridges modules
Diodes bridges modules

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049692
Diode<gtran/> 2CL75A
Diode 2CL75A
5mA 16kV 0.08ms
327 pcs
2:
20:
200:
6,75UAH
6,24UAH
5,74UAH
DiodeОдиночныйБыстрый диод5 мА16 kVDO312
052640
Diode<gtran/> 1N4448W T5
Diode 1N4448W T5
0.15A 80V 4ns
177450 pcs
50:
500:
3000:
0,27UAH
0,243UAH
0,203UAH
DiodeОдиночныйБыстрый диод0.15 А80 VSOD123FOSAN
052641
Diode<gtran/> 1N4448WS T5
Diode 1N4448WS T5
0.15A 80V 4ns 200mW
179800 pcs
50:
500:
3000:
0,27UAH
0,243UAH
0,203UAH
DiodeОдиночныйБыстрый диод0.15 А80 VSOD323FOSAN
032970
Diode<gtran/> 1N4148WT
Diode 1N4148WT
17580 pcs
50:
300:
3000:
0,338UAH
0,304UAH
0,253UAH
DiodeОдиночныйБыстрый диод0.15 А100 VSOD523
050632
Diode<gtran/> 1N4148W T4
Diode 1N4148W T4
0.15A 100V 4ns
1670 pcs
50:
500:
3000:
0,239UAH
0,215UAH
0,179UAH
DiodeОдиночныйБыстрый диод0.15 А100 VSOD123FOSAN
052634
Diode<gtran/> 1N4148WL T4
Diode 1N4148WL T4
0.15A 100V 4ns 200mW
356150 pcs
50:
500:
3000:
0,27UAH
0,243UAH
0,203UAH
DiodeОдиночныйБыстрый диод0.15 А100 VSOD123-FLFOSAN
052635
Diode<gtran/> 1N4148WS T4
Diode 1N4148WS T4
0.15A 100V 4ns 200mW
171790 pcs
50:
500:
3000:
0,27UAH
0,243UAH
0,203UAH
DiodeОдиночныйБыстрый диод0.15 А100 VSOD323FOSAN
016327
Schottky diode<gtran/> BAT54A
Schottky diode BAT54A
2X0.2A 30V common anode
1030 pcs
50:
500:
3000:
0,45UAH
0,405UAH
0,338UAH
2 DiodeОбщий анодДиод Шоттки0.2 А30 VSOT23
026721
Schottky diode<gtran/> BAT54
Schottky diode BAT54
0.2A 30V SOT23 Single
3850 pcs
50:
500:
3000:
0,45UAH
0,405UAH
0,338UAH
DiodeОдиночныйДиод Шоттки0.2 А30 VSOT23
050634
Schottky diode<gtran/> BAT54C
Schottky diode BAT54C
2X0.2A 30V common cathode
77350 pcs
50:
500:
3000:
0,45UAH
0,405UAH
0,338UAH
2 DiodeОбщий катодДиод Шоттки0.2 А30 VSOT23FOSAN
052642
Schottky diode<gtran/> BAT54A
Schottky diode BAT54A
2X0.2A 30V common anode
59550 pcs
50:
500:
3000:
0,45UAH
0,405UAH
0,338UAH
2 DiodeОбщий анодДиод Шоттки0.2 А30 VSOT23FOSAN
003417
Diode LL<gtran/>4148 LL-34
Diode LL4148 LL-34
VR = 75V, IF = 200mA, IFRM = 450mA, IFSM = 4A t = 4ns
43750 pcs
50:
500:
2500:
0,225UAH
0,203UAH
0,169UAH
DiodeОдиночныйБыстрый диод0.2 А75 VLL-34SEMTECH
050638
Diode<gtran/> BAV99
Diode BAV99
Two diodes in series Vr=80B, If=0.2A
42060 pcs
50:
500:
3000:
0,338UAH
0,304UAH
0,253UAH
2 DiodeПолумостБыстрый диод0.2 А80 VSOT23FOSAN
026725
Diode<gtran/> MMBD7000
Diode MMBD7000
0.2A 100V 15ns serial connection
630 pcs
10:
100:
1000:
0,81UAH
0,689UAH
0,608UAH
2 DiodeПолумостБыстрый диод0.2 А100 VSOT23TASUND
027650
Diode<gtran/> 1N4148 (in tape)<gtran/>
Diode 1N4148 (in tape)
0.2A 100V
90497 pcs
50:
500:
5000:
0,27UAH
0,243UAH
0,216UAH
DiodeОдиночныйБыстрый диод0.2 А100 VDO35SEMTECH
052643
Diode<gtran/> BAV70
Diode BAV70
Two diodes with a common cathode. Vr = 100 V, If = 200 mA, trr = 6 ns
55260 pcs
20:
500:
3000:
0,338UAH
0,304UAH
0,253UAH
2 DiodeОбщий катодБыстрый диод0.2 А100 VSOT23FOSAN
024726
Diode<gtran/> BAV21W
Diode BAV21W
0.2A 200V Sod123
7750 pcs
50:
500:
3000:
0,567UAH
0,51UAH
0,425UAH
DiodeОдиночныйБыстрый диод0.2 А200 VSOD123CJ
005836
Diode<gtran/> BAV21
Diode BAV21
0.2A 250V 50ns
8028 pcs
10:
100:
1000:
1,22UAH
1,09UAH
0,911UAH
DiodeОдиночныйБыстрый диод0.2 А250 VDO35
004006
Diode<gtran/> BAV70
Diode BAV70
Two diodes with a common cathode. Vr = 75V, If = 215mA Cd = 1.5pF trr = 4ns, High-speed switching diodes
450 pcs
10:
500:
3000:
0,63UAH
0,504UAH
0,378UAH
2 DiodeОбщий катодБыстрый диод0.215 А100 VSOT23
031507
Diode<gtran/> MMBD3004BRM-7-F
Diode MMBD3004BRM-7-F
Diode assembly two half-bridge 300V 225MA 50ns
191 pcs
1:
50:
300:
8,55UAH
7,70UAH
7,27UAH
4 Diode2 полумостаБыстрый диод0.225 А300 VSOT23-6DIODES
005954
Diode<gtran/> BAV103PF
Diode BAV103PF
0.2A 200V 50ns
17880 pcs
10:
500:
2500:
1,35UAH
1,22UAH
1,01UAH
DiodeОдиночныйБыстрый диод0.25 А200 VSOD80CSEMTECH
029211
Diode<gtran/> BAV23S
Diode BAV23S
225mA 250V 50ns serial connection
6413 pcs
1,49UAH
10:
100:
3000:
1,13UAH
1,01UAH
0,90UAH
2 DiodeПолумостБыстрый диод0.4 А200 VSOT23CJ
005403
Diode bridge<gtran/> MB6S
Diode bridge MB6S
Diode Bridge 0.5A 600V
8890 pcs
10:
100:
1000:
0,563UAH
0,506UAH
0,45UAH
4 DiodeМостВыпрямительный диод0.5 А600 V
028473
Diode bridge<gtran/> MB6M
Diode bridge MB6M
Diode Bridge 0.5A 600V
4890 pcs
10:
100:
1000:
1,13UAH
1,01UAH
0,90UAH
4 DiodeМостВыпрямительный диод0.5 А600 V
029188
Diode bridge<gtran/> MB6F
Diode bridge MB6F
Diode Bridge, 0.5A 600V
55205 pcs
10:
100:
1000:
0,617UAH
0,555UAH
0,493UAH
4 DiodeМостВыпрямительный диод0.5 А600 V
029189
Diode bridge<gtran/> MB10F
Diode bridge MB10F
Diode Bridge 0.5A 1000V
39055 pcs
10:
100:
1000:
0,563UAH
0,506UAH
0,45UAH
4 DiodeМостВыпрямительный диод0.5 А1 kV
012858
Diode bridge<gtran/> MB10M
Diode bridge MB10M
0.8A  1000V
11754 pcs
10:
100:
1000:
1,13UAH
0,956UAH
0,788UAH
4 DiodeМостВыпрямительный диод0.8 А1 kV
013930
Diode bridge<gtran/> MB10S
Diode bridge MB10S
MINI SILICON SURFACE MOUNT BRIDGE RECTIFIER - 0.8A  1000V
1460 pcs
10:
100:
1000:
0,54UAH
0,486UAH
0,432UAH
4 DiodeМостВыпрямительный диод0.8 А1 kV
007194
Schottky diode<gtran/> 1N5818
Schottky diode 1N5818
30V 1A/25Ap
32969 pcs
10:
100:
1000:
0,90UAH
0,81UAH
0,72UAH
DiodeОдиночныйДиод Шоттки1 А30 VDO41
004808
Schottky diode<gtran/> 1N5819 (in tape)<gtran/>
Schottky diode 1N5819 (in tape)
40V 1A/25Ap
34684 pcs
10:
100:
1000:
0,90UAH
0,81UAH
0,72UAH
DiodeОдиночныйДиод Шоттки1 А40 VDO41
036057
Schottky diode<gtran/> 1N5819WT
Schottky diode 1N5819WT
Schottky diode 1A, 40V.
1120 pcs
50:
500:
3000:
0,45UAH
0,405UAH
0,338UAH
DiodeОдиночныйДиод Шоттки1 А40 VSOD523
052636
Schottky diode<gtran/> B5819W SL
Schottky diode B5819W SL
Schottky diode 1A, 40V.
169899 pcs
50:
500:
3000:
0,225UAH
0,203UAH
0,169UAH
DiodeОдиночныйДиод Шоттки1 А40 VSOD123FOSAN
052637
Schottky diode B5819WS SL
Schottky diode B5819WS SL
40V 1A
9050 pcs
50:
500:
3000:
0,239UAH
0,215UAH
0,179UAH
DiodeОдиночныйДиод Шоттки1 А40 VSOD323FOSAN
052638
Schottky diode<gtran/> B5819WT SL
Schottky diode B5819WT SL
Schottky diode 1A, 40V.
59800 pcs
50:
500:
3000:
0,338UAH
0,304UAH
0,253UAH
DiodeОдиночныйДиод Шоттки1 А40 VSOD523FOSAN
052644
Schottky diode DSK14W K14
Schottky diode DSK14W K14
Diode 1A, 40V.
57850 pcs
50:
500:
3000:
0,419UAH
0,377UAH
0,314UAH
DiodeОдиночныйДиод Шоттки1 А40 VSOD123-FLFOSAN
052650
Schottky diode SS14F
Schottky diode SS14F
Schottky diode 1A 40V
53500 pcs
50:
500:
3000:
0,45UAH
0,405UAH
0,338UAH
DiodeОдиночныйДиод Шоттки1 А40 VSMAFFOSAN
029199
Diode<gtran/> 1N4001 (in tape)<gtran/>
Diode 1N4001 (in tape)
17181 pcs
10:
100:
1000:
0,675UAH
0,608UAH
0,54UAH
DiodeОдиночныйВыпрямительный диод1 А50 VDO41MIC
029196
Schottky diode<gtran/> SR160 (in tape)<gtran/>
Schottky diode SR160 (in tape)
1A 60V
5890 pcs
10:
100:
1000:
0,99UAH
0,891UAH
0,792UAH
DiodeОдиночныйДиод Шоттки1 А60 VDO41MIC
016328
Schottky diode<gtran/> SS18
Schottky diode SS18
Schottky diode 1A, 80B
5330 pcs
20:
300:
2000:
1,02UAH
0,915UAH
0,763UAH
DiodeОдиночныйДиод Шоттки1 А80 VSMA
029198
Schottky diode<gtran/> SR1100 (in tape)<gtran/>
Schottky diode SR1100 (in tape)
1A 100V
3530 pcs
10:
100:
1000:
1,13UAH
0,956UAH
0,788UAH
DiodeОдиночныйДиод Шоттки1 А100 VDO41MIC
052647
Schottky diode SS110
Schottky diode SS110
1A 100V
115750 pcs
50:
500:
5000:
0,509UAH
0,458UAH
0,381UAH
DiodeОдиночныйДиод Шоттки1 А100 VSMAFOSAN
052648
Schottky diode SS110F
Schottky diode SS110F
1A 100V
56500 pcs
50:
500:
3000:
0,36UAH
0,324UAH
0,27UAH
DiodeОдиночныйДиод Шоттки1 А100 VSMAFFOSAN
007175
Diode<gtran/> SF16
Diode SF16
1A 400V 35ns
29627 pcs
10:
500:
5000:
0,90UAH
0,765UAH
0,63UAH
DiodeОдиночныйБыстрый диод1 А400 VDO41
029200
Diode<gtran/> 1N4004 (in tape)<gtran/>
Diode 1N4004 (in tape)
26190 pcs
10:
100:
1000:
0,63UAH
0,567UAH
0,504UAH
DiodeОдиночныйВыпрямительный диод1 А400 VDO41MIC
005635
Diode<gtran/> SF18
Diode SF18
1A 600V 35ns
11770 pcs
10:
500:
3000:
0,99UAH
0,842UAH
0,693UAH
DiodeОдиночныйБыстрый диод1 А600 VDO41
006780
Diode<gtran/> 1N4937
Diode 1N4937
1A 600V 150ns
16990 pcs
10:
100:
1000:
0,90UAH
0,81UAH
0,675UAH
DiodeОдиночныйБыстрый диод1 А600 VDO41
005903
Diode<gtran/> HER108
Diode HER108
1A 1000V 75ns
14330 pcs
10:
500:
5000:
0,90UAH
0,765UAH
0,63UAH
DiodeОдиночныйБыстрый диод1 А1 kVDO41
006200
Diode<gtran/> 1A7
Diode 1A7
1A 1000V
6160 pcs
10:
100:
1000:
0,675UAH
0,574UAH
0,473UAH
DiodeОдиночныйВыпрямительный диод1 А1 kVR-1
006856
Diode bridge<gtran/> DB107
Diode bridge DB107
1-phase bridge, 1A, 1000V, case: DIP4 (pitch: 5.08 mm)
7938 pcs
10:
100:
1000:
1,69UAH
1,52UAH
1,35UAH
4 DiodeМостВыпрямительный диод1 А1 kVDIP4SEP
011731
Diode<gtran/> FR107
Diode FR107
1A 1000V
1470 pcs
50:
500:
5000:
0,36UAH
0,324UAH
0,27UAH
DiodeОдиночныйБыстрый диод1 А1 kVDO41MIC
    Diode(from ancient Greek δις - two and -od - from the end -od of the term electrode; literally "two-electrode"; root -od comes from ancient Greek ὁδός "path") - an electronic element with different conductivity in depending on the direction of the electric current. Diode electrodes are called anode and cathode.
A semiconductor diode consists of either p-type and n-type semiconductors (semiconductors with different types of impurity conductivity), or semiconductor and metal (Schottky diode). The contact between semiconductors is called a pn junction and conducts current in one direction (has one-way conductivity).

Special types of diodes:

  • Zener diodes (Zener diodes) are diodes operating in the mode of (reversible) breakdown of the pn junction (see the reverse branch of the current-voltage characteristic). Used for voltage stabilization.
  • Tunnel diodes (Leo Esaki diodes) are diodes that use quantum mechanical effects. On the current-voltage characteristic, they have a region of the so-called "negative resistance". They are used as amplifiers, generators, etc.
  • Inverted diodes are diodes that have a much lower on-state voltage drop than conventional diodes. The principle of operation of such diodes is based on the tunneling effect.
  • Point diodes are diodes characterized by a low p-n-junction capacitance and the presence on the reverse branch of the current-voltage characteristic of a section with a negative differential resistance. Previously, they were used in microwave technology (due to the low capacity of the p-n-junction) and were used in generators and amplifiers (due to the presence on the reverse branch of the current-voltage characteristic of a section with negative differential resistance).
  • Varicaps (John Geumm diodes) are diodes with a large capacity when the pn junction is locked, depending on the applied reverse voltage. They are used as variable capacitors.
  • LEDs (Henry Round diodes) are diodes that differ from ordinary diodes in that they emit light in the visible range (and not in the infrared) when electrons and holes recombine in the pn junction. LEDs are also produced with radiation in the infrared range, and more recently - in the ultraviolet.
  • Semiconductor lasers are diodes that are similar in design to LEDs, but have an optical resonator. Emit coherent light.
  • Photodiodes are diodes that are exposed to light.
  • A solar cell is a diode similar to a photodiode but operates without bias. Light falling on the pn junction causes the movement of electrons and the generation of current.
  • Gunn diodes are diodes used for generating and converting frequencies in the microwave range.
  • The Schottky diode is a low voltage drop diode with direct power on.
  • An avalanche diode is a diode whose principle of operation is based on an avalanche breakdown (see the reverse section of the current-voltage characteristic). It is used to protect circuits from overvoltage.
  • Avalanche-transit diode is a diode, the principle of operation of which is based on avalanche multiplication of charge carriers. It is used to generate oscillations in microwave technology.
  • Magnetodiode is a diode, the current-voltage characteristic of which significantly depends on the value of the magnetic field induction and the location of its vector relative to the plane of the p-n-junction.
  • Stabilizers are diodes, during the operation of which a section of the branch of the current-voltage characteristic is used, corresponding to the "forward voltage" on the diode.
  • A mixing diode is a diode designed to multiply two high-frequency signals.
  • pin diode - a diode with a lower capacitance due to the presence between heavily doped p- and n-type semiconductors of a material characterized by its own conductivity. Used in microwave technology, power electronics, as a photodetector.

* the full version of the article can be found atlink
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