| Код | photo_camera | Remains | shopping_cart | 1 | 2 | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 049692 | ![]() | Diode 5mA 16kV 0.08ms | 327 pcs |
| Diode | Одиночный | Быстрый диод | 5 мА | 16 kV | DO312 | ||||
| 052640 | ![]() | Diode 0.15A 80V 4ns | 177450 pcs |
| Diode | Одиночный | Быстрый диод | 0.15 А | 80 V | SOD123 | FOSAN | |||
| 052641 | ![]() | Diode 0.15A 80V 4ns 200mW | 179800 pcs |
| Diode | Одиночный | Быстрый диод | 0.15 А | 80 V | SOD323 | FOSAN | |||
| 032970 | ![]() | Diode | 17580 pcs |
| Diode | Одиночный | Быстрый диод | 0.15 А | 100 V | SOD523 | ||||
| 050632 | ![]() | Diode 0.15A 100V 4ns | 1670 pcs |
| Diode | Одиночный | Быстрый диод | 0.15 А | 100 V | SOD123 | FOSAN | |||
| 052634 | ![]() | Diode 0.15A 100V 4ns 200mW | 356150 pcs |
| Diode | Одиночный | Быстрый диод | 0.15 А | 100 V | SOD123-FL | FOSAN | |||
| 052635 | ![]() | Diode 0.15A 100V 4ns 200mW | 171790 pcs |
| Diode | Одиночный | Быстрый диод | 0.15 А | 100 V | SOD323 | FOSAN | |||
| 016327 | ![]() | Schottky diode 2X0.2A 30V common anode | 1030 pcs |
| 2 Diode | Общий анод | Диод Шоттки | 0.2 А | 30 V | SOT23 | ||||
| 026721 | ![]() | Schottky diode 0.2A 30V SOT23 Single | 3850 pcs |
| Diode | Одиночный | Диод Шоттки | 0.2 А | 30 V | SOT23 | ||||
| 050634 | ![]() | Schottky diode 2X0.2A 30V common cathode | 77350 pcs |
| 2 Diode | Общий катод | Диод Шоттки | 0.2 А | 30 V | SOT23 | FOSAN | |||
| 052642 | ![]() | Schottky diode 2X0.2A 30V common anode | 59550 pcs |
| 2 Diode | Общий анод | Диод Шоттки | 0.2 А | 30 V | SOT23 | FOSAN | |||
| 003417 | ![]() | Diode LL VR = 75V, IF = 200mA, IFRM = 450mA, IFSM = 4A t = 4ns | 43750 pcs |
| Diode | Одиночный | Быстрый диод | 0.2 А | 75 V | LL-34 | SEMTECH | |||
| 050638 | ![]() | Diode Two diodes in series Vr=80B, If=0.2A | 42060 pcs |
| 2 Diode | Полумост | Быстрый диод | 0.2 А | 80 V | SOT23 | FOSAN | |||
| 026725 | ![]() | Diode 0.2A 100V 15ns serial connection | 630 pcs |
| 2 Diode | Полумост | Быстрый диод | 0.2 А | 100 V | SOT23 | TASUND | |||
| 027650 | ![]() | Diode 0.2A 100V | 90497 pcs |
| Diode | Одиночный | Быстрый диод | 0.2 А | 100 V | DO35 | SEMTECH | |||
| 052643 | ![]() | Diode Two diodes with a common cathode. Vr = 100 V, If = 200 mA, trr = 6 ns | 55260 pcs |
| 2 Diode | Общий катод | Быстрый диод | 0.2 А | 100 V | SOT23 | FOSAN | |||
| 024726 | ![]() | Diode 0.2A 200V Sod123 | 7750 pcs |
| Diode | Одиночный | Быстрый диод | 0.2 А | 200 V | SOD123 | CJ | |||
| 005836 | ![]() | Diode 0.2A 250V 50ns | 8028 pcs |
| Diode | Одиночный | Быстрый диод | 0.2 А | 250 V | DO35 | ||||
| 004006 | ![]() | Diode Two diodes with a common cathode. Vr = 75V, If = 215mA Cd = 1.5pF trr = 4ns, High-speed switching diodes | 450 pcs |
| 2 Diode | Общий катод | Быстрый диод | 0.215 А | 100 V | SOT23 | ||||
| 031507 | ![]() | Diode Diode assembly two half-bridge 300V 225MA 50ns | 191 pcs |
| 4 Diode | 2 полумоста | Быстрый диод | 0.225 А | 300 V | SOT23-6 | DIODES | |||
| 005954 | ![]() | Diode 0.2A 200V 50ns | 17880 pcs |
| Diode | Одиночный | Быстрый диод | 0.25 А | 200 V | SOD80C | SEMTECH | |||
| 029211 | ![]() | Diode 225mA 250V 50ns serial connection | 6413 pcs | 1,49UAH
| 2 Diode | Полумост | Быстрый диод | 0.4 А | 200 V | SOT23 | CJ | |||
| 005403 | ![]() | Diode bridge Diode Bridge 0.5A 600V | 8890 pcs |
| 4 Diode | Мост | Выпрямительный диод | 0.5 А | 600 V | |||||
| 028473 | ![]() | Diode bridge Diode Bridge 0.5A 600V | 4890 pcs |
| 4 Diode | Мост | Выпрямительный диод | 0.5 А | 600 V | |||||
| 029188 | ![]() | Diode bridge Diode Bridge, 0.5A 600V | 55205 pcs |
| 4 Diode | Мост | Выпрямительный диод | 0.5 А | 600 V | |||||
| 029189 | ![]() | Diode bridge Diode Bridge 0.5A 1000V | 39055 pcs |
| 4 Diode | Мост | Выпрямительный диод | 0.5 А | 1 kV | |||||
| 012858 | ![]() | Diode bridge 0.8A 1000V | 11754 pcs |
| 4 Diode | Мост | Выпрямительный диод | 0.8 А | 1 kV | |||||
| 013930 | ![]() | Diode bridge MINI SILICON SURFACE MOUNT BRIDGE RECTIFIER - 0.8A 1000V | 1460 pcs |
| 4 Diode | Мост | Выпрямительный диод | 0.8 А | 1 kV | |||||
| 007194 | ![]() | Schottky diode 30V 1A/25Ap | 32969 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 30 V | DO41 | ||||
| 004808 | ![]() | Schottky diode 40V 1A/25Ap | 34684 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 40 V | DO41 | ||||
| 036057 | ![]() | Schottky diode Schottky diode 1A, 40V. | 1120 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 40 V | SOD523 | ||||
| 052636 | ![]() | Schottky diode Schottky diode 1A, 40V. | 169899 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 40 V | SOD123 | FOSAN | |||
| 052637 | ![]() | Schottky diode B5819WS SL 40V 1A | 9050 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 40 V | SOD323 | FOSAN | |||
| 052638 | ![]() | Schottky diode Schottky diode 1A, 40V. | 59800 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 40 V | SOD523 | FOSAN | |||
| 052644 | ![]() | Schottky diode DSK14W K14 Diode 1A, 40V. | 57850 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 40 V | SOD123-FL | FOSAN | |||
| 052650 | ![]() | Schottky diode SS14F Schottky diode 1A 40V | 53500 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 40 V | SMAF | FOSAN | |||
| 029199 | ![]() | Diode | 17181 pcs |
| Diode | Одиночный | Выпрямительный диод | 1 А | 50 V | DO41 | MIC | |||
| 029196 | ![]() | Schottky diode 1A 60V | 5890 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 60 V | DO41 | MIC | |||
| 016328 | ![]() | Schottky diode Schottky diode 1A, 80B | 5330 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 80 V | SMA | ||||
| 029198 | ![]() | Schottky diode 1A 100V | 3530 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 100 V | DO41 | MIC | |||
| 052647 | ![]() | Schottky diode SS110 1A 100V | 115750 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 100 V | SMA | FOSAN | |||
| 052648 | ![]() | Schottky diode SS110F 1A 100V | 56500 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 100 V | SMAF | FOSAN | |||
| 007175 | ![]() | Diode 1A 400V 35ns | 29627 pcs |
| Diode | Одиночный | Быстрый диод | 1 А | 400 V | DO41 | ||||
| 029200 | ![]() | Diode | 26190 pcs |
| Diode | Одиночный | Выпрямительный диод | 1 А | 400 V | DO41 | MIC | |||
| 005635 | ![]() | Diode 1A 600V 35ns | 11770 pcs |
| Diode | Одиночный | Быстрый диод | 1 А | 600 V | DO41 | ||||
| 006780 | ![]() | Diode 1A 600V 150ns | 16990 pcs |
| Diode | Одиночный | Быстрый диод | 1 А | 600 V | DO41 | ||||
| 005903 | ![]() | Diode 1A 1000V 75ns | 14330 pcs |
| Diode | Одиночный | Быстрый диод | 1 А | 1 kV | DO41 | ||||
| 006200 | ![]() | Diode 1A 1000V | 6160 pcs |
| Diode | Одиночный | Выпрямительный диод | 1 А | 1 kV | R-1 | ||||
| 006856 | ![]() | Diode bridge 1-phase bridge, 1A, 1000V, case: DIP4 (pitch: 5.08 mm) | 7938 pcs |
| 4 Diode | Мост | Выпрямительный диод | 1 А | 1 kV | DIP4 | SEP | |||
| 011731 | ![]() | Diode 1A 1000V | 1470 pcs |
| Diode | Одиночный | Быстрый диод | 1 А | 1 kV | DO41 | MIC |
A semiconductor diode consists of either p-type and n-type semiconductors (semiconductors with different types of impurity conductivity), or semiconductor and metal (Schottky diode). The contact between semiconductors is called a pn junction and conducts current in one direction (has one-way conductivity).
Special types of diodes:
- Zener diodes (Zener diodes) are diodes operating in the mode of (reversible) breakdown of the pn junction (see the reverse branch of the current-voltage characteristic). Used for voltage stabilization.
- Tunnel diodes (Leo Esaki diodes) are diodes that use quantum mechanical effects. On the current-voltage characteristic, they have a region of the so-called "negative resistance". They are used as amplifiers, generators, etc.
- Inverted diodes are diodes that have a much lower on-state voltage drop than conventional diodes. The principle of operation of such diodes is based on the tunneling effect.
- Point diodes are diodes characterized by a low p-n-junction capacitance and the presence on the reverse branch of the current-voltage characteristic of a section with a negative differential resistance. Previously, they were used in microwave technology (due to the low capacity of the p-n-junction) and were used in generators and amplifiers (due to the presence on the reverse branch of the current-voltage characteristic of a section with negative differential resistance).
- Varicaps (John Geumm diodes) are diodes with a large capacity when the pn junction is locked, depending on the applied reverse voltage. They are used as variable capacitors.
- LEDs (Henry Round diodes) are diodes that differ from ordinary diodes in that they emit light in the visible range (and not in the infrared) when electrons and holes recombine in the pn junction. LEDs are also produced with radiation in the infrared range, and more recently - in the ultraviolet.
- Semiconductor lasers are diodes that are similar in design to LEDs, but have an optical resonator. Emit coherent light.
- Photodiodes are diodes that are exposed to light.
- A solar cell is a diode similar to a photodiode but operates without bias. Light falling on the pn junction causes the movement of electrons and the generation of current.
- Gunn diodes are diodes used for generating and converting frequencies in the microwave range.
- The Schottky diode is a low voltage drop diode with direct power on.
- An avalanche diode is a diode whose principle of operation is based on an avalanche breakdown (see the reverse section of the current-voltage characteristic). It is used to protect circuits from overvoltage.
- Avalanche-transit diode is a diode, the principle of operation of which is based on avalanche multiplication of charge carriers. It is used to generate oscillations in microwave technology.
- Magnetodiode is a diode, the current-voltage characteristic of which significantly depends on the value of the magnetic field induction and the location of its vector relative to the plane of the p-n-junction.
- Stabilizers are diodes, during the operation of which a section of the branch of the current-voltage characteristic is used, corresponding to the "forward voltage" on the diode.
- A mixing diode is a diode designed to multiply two high-frequency signals.
- pin diode - a diode with a lower capacitance due to the presence between heavily doped p- and n-type semiconductors of a material characterized by its own conductivity. Used in microwave technology, power electronics, as a photodetector.
* the full version of the article can be found atlink





































