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049692 | ![]() | Diode 5mA 16kV 0.08ms | всего: 934 pcs маг ДП: 934 pcs |
| Diode | Одиночный | Быстрый диод | 5 мА | 16 kV | DO312 | ||||
016327 | ![]() | Schottky diode 2X0.2A 30V common anode | всего: 5680 pcs маг ДП: 5680 pcs |
| 2 Diode | Общий анод | Диод Шоттки | 0.2 А | 30 V | SOT23 | ||||
026721 | ![]() | Schottky diode 0.2A 30V SOT23 Single | всего: 6600 pcs маг ДП: 600 pcs |
| Diode | Одиночный | Диод Шоттки | 0.2 А | 30 V | SOT23 | ||||
050633 | ![]() | Schottky diode 2X0.2A 30V series connection | всего: 21640 pcs маг ДП: 640 pcs |
| 2 Diode | Полумост | Диод Шоттки | 0.2 А | 30 V | SOT23 | FOSAN | |||
003417 | ![]() | Diode LL VR = 75V, IF = 200mA, IFRM = 450mA, IFSM = 4A t = 4ns | всего: 37600 pcs маг ДП: 37600 pcs |
| Diode | Одиночный | Быстрый диод | 0.2 А | 75 V | SOD80C | SEMTECH | |||
050638 | ![]() | Diode Two diodes in series Vr=80B, If=0.2A | всего: 13360 pcs маг ДП: 13360 pcs |
| 2 Diode | Полумост | Быстрый диод | 0.2 А | 80 V | SOT23 | FOSAN | |||
026725 | ![]() | Diode 0.2A 100V 15ns serial connection | всего: 690 pcs маг ДП: 690 pcs |
| 2 Diode | Полумост | Быстрый диод | 0.2 А | 100 V | SOT23 | TASUND | |||
027650 | ![]() | Diode 0.2A 100V | всего: 152115 pcs маг ДП: 87115 pcs |
| Diode | Одиночный | Быстрый диод | 0.2 А | 100 V | DO35 | SEMTECH | |||
024726 | ![]() | Diode 0.2A 200V Sod123 | всего: 11200 pcs маг ДП: 11200 pcs |
| Diode | Одиночный | Быстрый диод | 0.2 А | 200 V | SOD123 | CJ | |||
005836 | ![]() | Diode 0.2A 250V 50ns | всего: 9758 pcs маг ДП: 9758 pcs |
| Diode | Одиночный | Быстрый диод | 0.2 А | 250 V | DO35 | ||||
027575 | ![]() | Diode Two diodes with a common anode. Vr = 75V, If = 215mA Cd = 2pF trr = 4ns, High-speed switching diodes | всего: 8690 pcs маг ДП: 2690 pcs |
| 2 Diode | Общий анод | Быстрый диод | 0.215 А | 75 V | SOT23 | ||||
004006 | ![]() | Diode Two diodes with a common cathode. Vr = 75V, If = 215mA Cd = 1.5pF trr = 4ns, High-speed switching diodes | всего: 4300 pcs маг ДП: 4300 pcs |
| 2 Diode | Общий катод | Быстрый диод | 0.215 А | 100 V | SOT23 | ||||
031507 | ![]() | Diode Diode assembly two half-bridge 300V 225MA 50ns | всего: 304 pcs маг ДП: 304 pcs |
| 4 Diode | 2 полумоста | Быстрый диод | 0.225 А | 300 V | SOT23-6 | DIODES | |||
005954 | ![]() | Diode 0.2A 200V 50ns | всего: 19740 pcs маг ДП: 19740 pcs |
| Diode | Одиночный | Быстрый диод | 0.25 А | 200 V | SOD80C | SEMTECH | |||
023535 | ![]() | Diode 0.15A 100V 4ns 200mW | всего: 1150 pcs маг ДП: 1150 pcs |
| Diode | Одиночный | Быстрый диод | 0.3 А | 100 V | SOD323 | ||||
032970 | ![]() | Diode | всего: 31260 pcs маг ДП: 31260 pcs |
| Diode | Одиночный | Быстрый диод | 0.3 А | 100 V | SOD523 | ||||
037086 | ![]() | Diode 0.35A 12kV is used in magnetron power circuits, for microwave ovens | всего: 116 pcs маг ДП: 116 pcs |
| Diode | Одиночный | Выпрямительный диод | 0.35 А | 12 kV | SK | ||||
029211 | ![]() | Diode 225mA 250V 50ns serial connection | всего: 1210 pcs маг ДП: 1210 pcs |
| 2 Diode | Полумост | Быстрый диод | 0.4 А | 200 V | SOT23 | CJ | |||
005403 | ![]() | Diode bridge Diode Bridge 0.5A 600V | всего: 12280 pcs маг ДП: 280 pcs |
| 4 Diode | Мост | Выпрямительный диод | 0.5 А | 600 V | |||||
028473 | ![]() | Diode bridge Diode Bridge 0.5A 600V | всего: 6550 pcs маг ДП: 1550 pcs |
| 4 Diode | Мост | Выпрямительный диод | 0.5 А | 600 V | |||||
029188 | ![]() | Diode bridge Diode Bridge, 0.5A 600V | всего: 55655 pcs маг ДП: 5655 pcs |
| 4 Diode | Мост | Выпрямительный диод | 0.5 А | 600 V | |||||
029189 | ![]() | Diode bridge Diode Bridge 0.5A 1000V | всего: 49165 pcs маг ДП: 9165 pcs |
| 4 Diode | Мост | Выпрямительный диод | 0.5 А | 1 kV | |||||
012858 | ![]() | Diode bridge 0.8A 1000V | всего: 11974 pcs маг ДП: 1974 pcs |
| 4 Diode | Мост | Выпрямительный диод | 0.8 А | 1 kV | |||||
013930 | ![]() | Diode bridge MINI SILICON SURFACE MOUNT BRIDGE RECTIFIER - 0.8A 1000V | всего: 26240 pcs маг ДП: 2240 pcs |
| 4 Diode | Мост | Выпрямительный диод | 0.8 А | 1 kV | |||||
002105 | ![]() | Schottky diode 20V 1A/25Ap | всего: 47770 pcs маг ДП: 28770 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 20 V | DO41 | ||||
007209 | ![]() | Schottky diode Schottky diode 1A 20V | всего: 2955 pcs маг ДП: 2955 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 20 V | SMA | ||||
007194 | ![]() | Schottky diode 30V 1A/25Ap | всего: 35029 pcs маг ДП: 35029 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 30 V | DO41 | ||||
004808 | ![]() | Schottky diode 40V 1A/25Ap | всего: 51305 pcs маг ДП: 32305 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 40 V | DO41 | ||||
006661 | ![]() | Schottky diode Schottky diode 1A 40V | всего: 6832 pcs маг ДП: 6832 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 40 V | SMA | ||||
029028 | ![]() | Schottky diode 40V 1A | всего: 25450 pcs маг ДП: 25450 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 40 V | SOD323 | ||||
036054 | ![]() | Schottky diode Diode 1A, 40V. | всего: 1400 pcs маг ДП: 1400 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 40 V | SOD123-FL | ||||
036057 | ![]() | Schottky diode Schottky diode 1A, 40V. | всего: 4770 pcs маг ДП: 1770 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 40 V | SOD523 | ||||
050637 | ![]() | Schottky diode Schottky diode 1A, 40V. | всего: 450 pcs маг ДП: 450 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 40 V | SOD123 | FOSAN | |||
029199 | ![]() | Diode | всего: 25311 pcs маг ДП: 311 pcs |
| Diode | Одиночный | Выпрямительный диод | 1 А | 50 V | DO41 | MIC | |||
004240 | ![]() | Schottky diode Schottky diode 1A, 60B | всего: 43625 pcs маг ДП: 43625 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 60 V | SMA | ||||
029196 | ![]() | Schottky diode 1A 60V | всего: 6740 pcs маг ДП: 6740 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 60 V | DO41 | MIC | |||
016328 | ![]() | Schottky diode Schottky diode 1A, 80B | всего: 7610 pcs маг ДП: 7610 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 80 V | SMA | ||||
029198 | ![]() | Schottky diode 1A 100V | всего: 4420 pcs маг ДП: 4420 pcs |
| Diode | Одиночный | Диод Шоттки | 1 А | 100 V | DO41 | MIC | |||
007175 | ![]() | Diode 1A 400V 35ns | всего: 29837 pcs маг ДП: 11837 pcs |
| Diode | Одиночный | Быстрый диод | 1 А | 400 V | DO41 | ||||
029200 | ![]() | Diode | всего: 29290 pcs маг ДП: 4790 pcs |
| Diode | Одиночный | Выпрямительный диод | 1 А | 400 V | DO41 | MIC | |||
005635 | ![]() | Diode 1A 600V 35ns | всего: 14560 pcs маг ДП: 4560 pcs |
| Diode | Одиночный | Быстрый диод | 1 А | 600 V | DO41 | ||||
006780 | ![]() | Diode 1A 600V 150ns | всего: 17310 pcs маг ДП: 5310 pcs |
| Diode | Одиночный | Быстрый диод | 1 А | 600 V | DO41 | ||||
036052 | ![]() | Diode bridge Diode Bridge 1A 800V | всего: 968 pcs маг ДП: 968 pcs |
| 4 Diode | Мост | Выпрямительный диод | 1 А | 800 V | |||||
004328 | ![]() | Diode 1A 1000V | всего: 48430 pcs маг ДП: 48430 pcs |
| Diode | Одиночный | Выпрямительный диод | 1 А | 1 kV | SMA | ||||
005903 | ![]() | Diode 1A 1000V 75ns | всего: 16100 pcs маг ДП: 3100 pcs |
| Diode | Одиночный | Быстрый диод | 1 А | 1 kV | DO41 | ||||
006200 | ![]() | Diode 1A 1000V | всего: 6550 pcs маг ДП: 6550 pcs |
| Diode | Одиночный | Выпрямительный диод | 1 А | 1 kV | R-1 | ||||
006856 | ![]() | Diode bridge 1-phase bridge, 1A, 1000V, case: DIP4 (pitch: 5.08 mm) | всего: 12078 pcs маг ДП: 9578 pcs |
| 4 Diode | Мост | Выпрямительный диод | 1 А | 1 kV | DIP4 | SEP | |||
011731 | ![]() | Diode 1A 1000V | всего: 8270 pcs маг ДП: 8270 pcs |
| Diode | Одиночный | Быстрый диод | 1 А | 1 kV | DO41 | MIC | |||
015680 | ![]() | Diode bridge 1-phase bridge, 1A, 1000V | всего: 15870 pcs маг ДП: 12870 pcs |
| 4 Diode | Мост | Выпрямительный диод | 1 А | 1 kV | |||||
016666 | ![]() | Diode 1A 1000V 75ns | всего: 65310 pcs маг ДП: 57310 pcs |
| Diode | Одиночный | Быстрый диод | 1 А | 1 kV | SMA |
A semiconductor diode consists of either p-type and n-type semiconductors (semiconductors with different types of impurity conductivity), or semiconductor and metal (Schottky diode). The contact between semiconductors is called a pn junction and conducts current in one direction (has one-way conductivity).
Special types of diodes:
- Zener diodes (Zener diodes) are diodes operating in the mode of (reversible) breakdown of the pn junction (see the reverse branch of the current-voltage characteristic). Used for voltage stabilization.
- Tunnel diodes (Leo Esaki diodes) are diodes that use quantum mechanical effects. On the current-voltage characteristic, they have a region of the so-called "negative resistance". They are used as amplifiers, generators, etc.
- Inverted diodes are diodes that have a much lower on-state voltage drop than conventional diodes. The principle of operation of such diodes is based on the tunneling effect.
- Point diodes are diodes characterized by a low p-n-junction capacitance and the presence on the reverse branch of the current-voltage characteristic of a section with a negative differential resistance. Previously, they were used in microwave technology (due to the low capacity of the p-n-junction) and were used in generators and amplifiers (due to the presence on the reverse branch of the current-voltage characteristic of a section with negative differential resistance).
- Varicaps (John Geumm diodes) are diodes with a large capacity when the pn junction is locked, depending on the applied reverse voltage. They are used as variable capacitors.
- LEDs (Henry Round diodes) are diodes that differ from ordinary diodes in that they emit light in the visible range (and not in the infrared) when electrons and holes recombine in the pn junction. LEDs are also produced with radiation in the infrared range, and more recently - in the ultraviolet.
- Semiconductor lasers are diodes that are similar in design to LEDs, but have an optical resonator. Emit coherent light.
- Photodiodes are diodes that are exposed to light.
- A solar cell is a diode similar to a photodiode but operates without bias. Light falling on the pn junction causes the movement of electrons and the generation of current.
- Gunn diodes are diodes used for generating and converting frequencies in the microwave range.
- The Schottky diode is a low voltage drop diode with direct power on.
- An avalanche diode is a diode whose principle of operation is based on an avalanche breakdown (see the reverse section of the current-voltage characteristic). It is used to protect circuits from overvoltage.
- Avalanche-transit diode is a diode, the principle of operation of which is based on avalanche multiplication of charge carriers. It is used to generate oscillations in microwave technology.
- Magnetodiode is a diode, the current-voltage characteristic of which significantly depends on the value of the magnetic field induction and the location of its vector relative to the plane of the p-n-junction.
- Stabilizers are diodes, during the operation of which a section of the branch of the current-voltage characteristic is used, corresponding to the "forward voltage" on the diode.
- A mixing diode is a diode designed to multiply two high-frequency signals.
- pin diode - a diode with a lower capacitance due to the presence between heavily doped p- and n-type semiconductors of a material characterized by its own conductivity. Used in microwave technology, power electronics, as a photodetector.
* the full version of the article can be found atlink